unisonic technologies co., ltd tip112 npn silicon transistor www.unisonic.com.tw 1 of 4 copyright ? 2012 unisonic technologies co., ltd qw-r203-022.d npn epitaxial silicon darlington transistor ? description the utc tip112 is designed for such applications as: dc/dc converters supply line switching, battery charger, lcd backlighting, peripheral drivers, driver in lo w supply voltage applications (e.g. lamps and leds) and inductive load driver (e.g. relays, buzzers and motors). ? features * high dc current gain : h fe = 1000 @ v ce =4v, i c =1a (min) * low collector-emitter saturation voltage ? equivalent test (r 1 10k ? , r 2 0.6k ? ) r1 r2 e b c ? ordering information ordering number package pin assignment packing lead free halogen free 1 2 3 tip112l-t60-k tip112g-t60-k to-126 e c b bulk tip112l-ta3-t tip112g-ta3-t to-220 b c e tube TIP112L-TN3-R tip112g-tn3-r to-252 b c e tape reel tip112l-tn3-t tip112g-tn3-t to-252 b c e tube
tip112 npn silicon transistor unisonic technologies co., ltd 2 of 4 www.unisonic.com.tw qw-r203-022.d ? absolute maximum rating (t c =25c, unless otherwise specified) parameter symbol ratings unit collector to base voltage v cbo 100 v collector to emitter voltage v ceo 100 v emitter to base voltage v ebo 5 v collector current dc i c 2 a peak i cm 4 base current (dc) i b 50 ma collector dissipation to-126 p c 10 w to-220 40 to-252 15 junction temperature t j 150 c storage temperature t stg -65~+150 c note: absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. ? electrical characteristics (t c =25c, unless otherwise specified) parameter symbol test conditions min typ max unit collector-emitter breakdown voltage v ceo ( sus ) i c =30ma, i b =0a 100 v collector-emitter satu ration voltage v ce ( sat ) i c =2a, i b =8ma 2.5 v base-emitter turn -on voltage v be ( on ) v ce =4v, i c =2a 2.8 collector-base cut-off current i cbo v cb =100v, i e =0a 1 ma collector-emitter cut-off current i ceo v ce =50v, v b =0a 2 ma emitter-base cut-off current i ebo v eb =5v, i c =0a 2 ma dc current gain h fe v ce =4v, i c =1a 1000 v ce =4v, i c =2a 500 collector capacitance c ob v cb =10v, i e =0a, f=0.1mhz 100 pf
tip112 npn silicon transistor unisonic technologies co., ltd 3 of 4 www.unisonic.com.tw qw-r203-022.d ? typical characteristics i b =150ua i b =200ua i b =250ua i b =300ua i b =350ua i b =500ua i b =400ua i b =450ua collector-emitter voltage, v ce (v) static characteristics collector current, i c (a) 01 2 3 4 5 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 v ce =4v collector current, i c (a) dc current gain dc current gain, h fe 0.01 110 10 100 1000 10000 0.1 110 10 1 0.1 dc 5ms 1ms 100 collector-emitter voltage, v ce (v) safe operating area 25 05075 100 125 150 175 0 10 20 30 40 50 60 70 80 case temperature, t c (c) power derating
tip112 npn silicon transistor unisonic technologies co., ltd 4 of 4 www.unisonic.com.tw qw-r203-022.d utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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